![Diode With Low Threshold Voltage And High Breakdown Voltage Zhang; Mengwen ; et al. [Shenzhen Goodix Technology Co., Ltd.] Diode With Low Threshold Voltage And High Breakdown Voltage Zhang; Mengwen ; et al. [Shenzhen Goodix Technology Co., Ltd.]](https://uspto.report/patent/app/20200274529/US20200274529A1-20200827-D00001.png)
Diode With Low Threshold Voltage And High Breakdown Voltage Zhang; Mengwen ; et al. [Shenzhen Goodix Technology Co., Ltd.]
![The threshold voltage of Si and Ge area) Si : 0.7V and Ge : 0.3Vb) Si : 1.1V and Ge : 0.5Vc) Si : 0.3V and Ge : 0.7Vd) Si : 0.5V and Ge : 1.1V The threshold voltage of Si and Ge area) Si : 0.7V and Ge : 0.3Vb) Si : 1.1V and Ge : 0.5Vc) Si : 0.3V and Ge : 0.7Vd) Si : 0.5V and Ge : 1.1V](https://www.vedantu.com/question-sets/65e2f5c5-6fc6-4fab-944a-1a852d9004b33409028828068047287.png)
The threshold voltage of Si and Ge area) Si : 0.7V and Ge : 0.3Vb) Si : 1.1V and Ge : 0.5Vc) Si : 0.3V and Ge : 0.7Vd) Si : 0.5V and Ge : 1.1V
![Radio and Electronics: 9. ACTIVE COMPONENTS -1- DIODES: 9.2. THE PN-JUNCTION OR DIODE: 9.2.2. CHARACTERISTICS OF A PN-JUNCTION OR DIODE Radio and Electronics: 9. ACTIVE COMPONENTS -1- DIODES: 9.2. THE PN-JUNCTION OR DIODE: 9.2.2. CHARACTERISTICS OF A PN-JUNCTION OR DIODE](https://www.nzdl.org/gsdl/collect/gtz/archives/HASH0137.dir/p28c.gif)
Radio and Electronics: 9. ACTIVE COMPONENTS -1- DIODES: 9.2. THE PN-JUNCTION OR DIODE: 9.2.2. CHARACTERISTICS OF A PN-JUNCTION OR DIODE
![How should I select TVS diodes (ESD protection diodes) according to the voltage level of a signal line to be protected? | Toshiba Electronic Devices & Storage Corporation | Americas – United States How should I select TVS diodes (ESD protection diodes) according to the voltage level of a signal line to be protected? | Toshiba Electronic Devices & Storage Corporation | Americas – United States](https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/knowledge/faq/diodes_tvs/How-should-I-select-TVS-diodes-ESD-protection-diodes-according-to-the-voltage-level-of-a-signal-line-to-be-protected_1_en.jpg)
How should I select TVS diodes (ESD protection diodes) according to the voltage level of a signal line to be protected? | Toshiba Electronic Devices & Storage Corporation | Americas – United States
![Energies | Free Full-Text | Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature Energies | Free Full-Text | Origin of Bypass Diode Fault in c-Si Photovoltaic Modules: Leakage Current under High Surrounding Temperature](https://pub.mdpi-res.com/energies/energies-11-02416/article_deploy/html/images/energies-11-02416-g001.png?1570467457)